DocumentCode :
1489856
Title :
Multicolor 
Light Emitting Diodes With Improved Emission Efficiency by Small Si Quantum Dots
Author :
Lai, Bo-Han ; Cheng, Chih-Hsien ; Lin, Gong-Ru
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
47
Issue :
5
fYear :
2011
fDate :
5/1/2011 12:00:00 AM
Firstpage :
698
Lastpage :
704
Abstract :
In this paper, multicolor ITO/SiOx/p-Si/Al light emitting diodes (LEDs) made by Si quantum dot (Si-QD) embedded Si-rich SiOx grown by detuning the radio frequency (RF) plasma power under the plasma-enhanced chemical vapor deposition system are presented. With the Si-QD size shrinkage obtained by increasing the RF plasma powers from 30 to 70 W, the turn-on voltage of red, green, and blue ITO/SiOx/p-Si/Al LEDs is found to increase from 70 to 99 V, with the maximum electroluminescent power increasing from 9 to 423 nW.
Keywords :
aluminium; electroluminescence; indium compounds; light emitting diodes; plasma CVD; semiconductor quantum dots; silicon; tin compounds; InSnO-SiO2-Si-Al; emission efficiency; maximum electroluminescent power; multicolor light emitting siodes; plasma-enhanced chemical vapor deposition; power 30 W to 70 W; power 9 nW to 423 nW; quantum dots; radiofrequency plasma power; size shrinkage; voltage 70 V to 99 V; Color; Indium tin oxide; Light emitting diodes; Plasmas; Radio frequency; Silicon; Tunneling; Electroluminescence; Si quantum dots; Si-rich ${rm SiO}_{rm x}$
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2011.2109699
Filename :
5743091
Link To Document :
