A Study of Geometry Effects on the Performance of Ballistic Deflection Transistor

Author

Kaushal, Vikas ; Iñiguez-de-la-Torre, Ignacio ; Irie, Hiroshi ; Guarino, Gregg ; Donaldson, William R. ; Ampadu, Paul ; Sobolewski, Roman ; Margala, Martin

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Massachusetts Lowell, Lowell, MA, USA

Volume

9

Issue

6

fYear

2010

Firstpage

723

Lastpage

733

Abstract

We present the results of an experimental study of dimensional ratios dependencies on the performance of a ballistic deflection transistor (BDT) operating in a quasi-ballistic regime. Experimental transconductance change based on geometry variations is studied for smaller and larger devices with channel width of 300 and 500 nm, respectively. Transconductance variation for a series of drain biases is also observed for a specific geometry and dimension. By means of Monte Carlo modeling we report the effect of different geometry parameters on the transfer characteristics of BDTs. The strength of the gate control in the InGaAs channel is analyzed.

Keywords

III-V semiconductors; Monte Carlo methods; ballistic transport; field effect transistors; gallium arsenide; indium compounds; semiconductor device models; InGaAs; InGaAs channel; Monte Carlo modeling; ballistic deflection transistor; dimensional ratios dependencies; drain biases; gate control; geometry variations; transconductance change; transfer characteristics; Ballistic transport; CMOS technology; Electrons; Geometry; III-V semiconductor materials; Monte Carlo methods; Permission; Solid modeling; Temperature; Transconductance; Experimental measurements; Monte Carlo (MC) modeling; nanotechnology; surface charge; transconductance;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2010.2050069

Filename

5464278