DocumentCode :
1490059
Title :
GaN-Based LEDs With Omnidirectional Metal Underneath an Insulating 
Layer
Author :
Lin, Nan-Ming ; Shei, Shih-Chang ; Chang, Shoou-Jinn ; Zeng, Xu-Feng
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
24
Issue :
10
fYear :
2012
fDate :
5/15/2012 12:00:00 AM
Firstpage :
815
Lastpage :
817
Abstract :
The authors report GaN-based light-emitting diodes (LEDs) with an Ag layer underneath an insulating SiO2 layer. It was found that we can not only achieve much better current spreading, but also prevent the light absorption by the opaque p-pad electrode. With 20-mA current injection, it was found that the output power of the LEDs with SiO2/Ag layers was 4.1% and 9.6% larger than those of the LEDs with a SiO2 layer and the LEDs without a SiO2 layer, respectively. It was also found that the 20-mA forward voltage only increased slightly, from 3.03 to 3.05 V, for the LEDs with the SiO2/Ag layers.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; silicon compounds; silver; wide band gap semiconductors; Ag; GaN; SiO2; current 20 mA; current injection; current spreading; insulating layer; light absorption; light emitting diodes; omnidirectional metal; opaque p-pad electrode; voltage 3.03 V to 3.05 V; Distributed Bragg reflectors; Electrodes; Indium tin oxide; Light emitting diodes; Metals; Power generation; ${rm SiO}_{2}$ ; Ag; GaN; light-emitting diodes;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2012.2188789
Filename :
6180073
Link To Document :
