Computer simulation of gates for ion-implanted devices

Author

Alex, Michael ; Wu, J.C. ; Kryder, Mark H.

Author_Institution

Magnetics Technol. Center, Carnegie-Mellon Univ., Pittsburgh, PA, USA

Volume

24

Issue

6

fYear

1988

fDate

11/1/1988 12:00:00 AM

Firstpage

3114

Lastpage

3116

Abstract

A computer simulator has been constructed which can be used to model the operation of current-activated gates used in ion-implanted magnetic bubble devices. Input parameters for the simulator include the geometry of the implanted patterns, magnetic characteristics of the bubble film, implanted layer thickness, conductor geometry, amplitude and phase of currents in conductors, and the frequency and amplitude of the drive field. The forces that act on the bubble are computed, and the resultant bubble wall motion is computed. The operation of various gates for ion-implanted devices has been analyzed. Simulation of propagation on ion-implanted patterns has been performed, and the predicted failure modes are the same as those observed in experimental devices. The simulated bias margins of both propagation and gate operation correspond well with experimentally obtained margins

Keywords

digital simulation; electronic engineering computing; ion implantation; magnetic bubble memories; bias margins; bubble wall motion; computer simulator; conductor geometry; current-activated gates; drive field; failure modes; gate operation; implanted layer thickness; implanted pattern geometry; ion-implanted devices; magnetic bubble devices; magnetic characteristics; propagation; Computational modeling; Computer simulation; Conductive films; Conductors; Frequency; Geometry; Magnetic films; Predictive models; Solid modeling; Tracking loops;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.92352

Filename

92352