DocumentCode :
1490536
Title :
Low-Power Very Low-Noise Cryogenic SiGe IF Amplifiers for Terahertz Mixer Receivers
Author :
Russell, Damon ; Weinreb, Sander
Author_Institution :
Dept. of Electr. Eng., Californian Inst. of Technol., Pasadena, CA, USA
Volume :
60
Issue :
6
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
1641
Lastpage :
1648
Abstract :
State-of-the-art radio astronomy terahertz receivers utilize clusters of super-conducting mixers with cryogenic IF amplifiers. The critical parameters of the IF amplifiers are noise temperature, bandwidth, power consumption, input return loss, and physical size. This paper presents test data on three approaches to the IF amplifier; two are silicon-germanium (SiGe) monolithic microwave integrated circuit designs and the third is a discrete SiGe transistor miniature module. The amplifiers provide noise temperatures in the range of 5-15 K, from 1 to 6 GHz, at power consumptions as low as 2 mW.
Keywords :
Ge-Si alloys; MMIC amplifiers; MMIC mixers; cryogenics; low noise amplifiers; low-power electronics; submillimetre wave amplifiers; submillimetre wave mixers; submillimetre wave receivers; SiGe; frequency 1 GHz to 6 GHz; input return loss; low power very low noise cryogenic IF amplifiers; monolithic microwave integrated circuit designs; power 2 W; power consumption; radio astronomy terahertz receivers; superconducting mixers; temperature 5 K to 15 K; terahertz mixer receivers; transistor miniature module; Cryogenics; MMICs; Mixers; Noise; Noise measurement; Silicon germanium; Cryogenics; low-noise amplifier (LNA); low-power electronics; monolithic microwave integrated circuits (MMICs); radio astronomy; silicon–germanium (SiGe);
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2012.2190744
Filename :
6180195
Link To Document :
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