Current Scaling in Aligned Carbon Nanotube Array Transistors With Local Bottom Gating

Author

Franklin, Aaron D. ; Lin, Albert ; Wong, H. -S Philip ; Chen, Zhihong

Author_Institution

IBM T J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

31

Issue

7

fYear

2010

fDate

7/1/2010 12:00:00 AM

Firstpage

644

Lastpage

646

Abstract

A local-bottom-gate (LBG) configuration is introduced for carbon nanotube array field-effect transistors (FETs) (CNTFETs). CNTFETs from highly aligned nanotubes are demonstrated and exhibit the best performance to date, with current density > 40 μA/μm (with no metallic nanotubes), inverse subthreshold slope of 70 mV/decade, and on/off -current ratio > 10⁵. Additionally, on-current from LBG-CNTFETs is shown to scale linearly with the number of nanotube channels. These advancements in device geometry and performance provide a new platform for further progress to be made toward high-performance FETs from aligned nanotubes.

Keywords

carbon nanotubes; current density; field effect transistors; LBG-CNTFET; aligned nanotube; carbon nanotube array field-effect transistor; current density; current scaling; device geometry; high-performance FET; local bottom gating; local-bottom-gate configuration; nanotube channel; on/off -current ratio; Carbon nanotube (CNT); field-effect transistor (FET); length scaling; local gate; multichannel array;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2047231

Filename

5464369