Title : 
Very Large Area CMOS Active-Pixel Sensor for Digital Radiography
         
        
            Author : 
Farrier, Michael ; Achterkirchen, Thorsten Graeve ; Weckler, Gene P. ; Mrozack, Alex
         
        
            Author_Institution : 
Rad-icon Imaging, DALSA Corp., Sunnyvale, CA, USA
         
        
        
        
        
        
        
            Abstract : 
To address the growing demand for low-noise large-area digital-radiography sensors, a unique CMOS active-pixel sensor (APS) technology has been developed. Large-tiled CMOS radiographic panels can compete in performance with passive-pixel arrays, amorphous-silicon thin-film-transistor panels, and phosphor-panel technologies. Although CMOS sensors have become a key technology in low-cost consumer camera products, CMOS APS technology is also suited for manufacture of large-format imagers used to construct radiographic-detector panels. Large-area CMOS radiographic sensors combine a large full well over 3.5 million e- with low read noise less than 300 e- to provide wide dynamic range and improved signal-to-noise ratio under demanding radiographic imaging conditions. With precision-assembly techniques, tiling gaps are minimized to be less than 0.3 pixels to produce fully correctable flat-field images. Applications include nondestructive testing, scientific imaging, security screening, and medical radiography.
         
        
            Keywords : 
CMOS image sensors; amorphous semiconductors; elemental semiconductors; radiography; silicon; thin film transistors; Si; amorphous-silicon thin-film-transistor panels; digital-radiography sensors; fully correctable flat-field images; large-format imagers; large-tiled CMOS radiographic panels; medical radiography; nondestructive testing; passive-pixel arrays; phosphor-panel technologies; precision-assembly techniques; scientific imaging; security screening; signal-to-noise ratio; tiling gaps; very large area CMOS active-pixel sensor; CMOS image sensors; CMOS technology; Cameras; Dynamic range; Manufacturing; Nondestructive testing; Pixel; Radiography; Security; Signal to noise ratio; CMOS active pixel sensor (APS); X-ray imager; digital radiography; dynamic range; large area; read noise; tiled array;
         
        
        
            Journal_Title : 
Electron Devices, IEEE Transactions on
         
        
        
        
        
            DOI : 
10.1109/TED.2009.2031001