Title :
Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region
Author :
Wu, Yu-Sheng ; Su, Pin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
This paper presents an analytical model for quantum-confinement effects in short-channel gate-all-around (GAA) MOSFETs under the subthreshold region. Our analytical model accurately predicts the impact of short-channel effects and doping concentration on the quantum-confinement effects. This scalable quantum-confinement model is crucial to the ultrascaled GAA MOSFET design.
Keywords :
MOSFET; doping profiles; semiconductor device models; semiconductor doping; analytical quantum-confinement model; doping concentration; short-channel gate-all-around MOSFET; ultrascaled GAA MOSFET design; Analytical models; Carrier confinement; Doping; Effective mass; Eigenvalues and eigenfunctions; Electrostatics; MOSFETs; Schrodinger equation; Semiconductor device modeling; Semiconductor process modeling; Gate-all-around (GAA); MOSFET; quantum effects; short-channel effect;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2030714
