Title :
Data transmission up to 10 Gbit/s with 1.3 μm wavelength InGaAsN VCSELs
Author :
Steinle, G. ; Mederer, F. ; Kicherer, M. ; Michalzik, R. ; Kristen, G. ; Egorov, A.Y. ; Riechert, H. ; Wolf, H.D. ; Ebeling, K.J.
Author_Institution :
Corp. Res. Photonics/COM FO E VCSEL, Infineon Technol. AG, Munich, Germany
fDate :
5/10/2001 12:00:00 AM
Abstract :
High bit rate data transmission with monolithic InGaAsN VCSELs, emitting 700 μW in singlemode operation at room temperature, is demonstrated. Bit error rates of <10-11 are achieved for transmission over 20.5 km of a standard singlemode fibre at 2.5 Gbit/s. In back-to-back transmission 10 Gbit/s is reached
Keywords :
III-V semiconductors; error statistics; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser modes; optical fibre communication; optical transmitters; semiconductor lasers; surface emitting lasers; 1.3 mum; 10 Gbit/s; 2.5 Gbit/s; 20.5 km; 298 K; 700 muW; InGaAsN; InGaAsN VCSEL; InGaAsN VCSELs; VCSELs; back-to-back transmission; bit error rates; data transmission; high bit rate data transmission; monolithic VCSELs; room temperature; singlemode operation; standard singlemode fibre; transmission; vertical cavity surface emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010425
