A proposed OEIC receiver using MESFET photodetector

Author

Chakrabarti, P. ; Rajamani, V.

Author_Institution

Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India

Volume

17

Issue

4

fYear

1999

fDate

4/1/1999 12:00:00 AM

Firstpage

659

Lastpage

668

Abstract

An optical receiver configuration based on the concept of using a single optically gated metal-semiconductor-fieid-effect transistor (MESFET) to perform the function of a photodetector and preamplifier has been introduced. The proposed optoelectronic integrated circuit (OEIC) receiver has been analyzed theoretically. A simplified noise model of the receiver has also been developed. Results have been presented for an OEIC receiver based on InGaAs MESFET supposed to be fabricated with matured InGaAs-InP MMIC technology. Theoretical results based on a simplistic noise model reveal that the proposed OEIC receiver has superior performance characteristics over the existing optical receivers

Keywords

MESFET integrated circuits; gallium arsenide; indium compounds; integrated circuit modelling; integrated optoelectronics; optical fabrication; optical noise; optical receivers; InGaAs; InGaAs MESFET; InGaAs-InP; InGaAs-InP MMIC technology; MESFET; MESFET photodetector; OEIC receiver; optical receiver configuration; optoelectronic integrated circuit; performance characteristics; photodetector; preamplifier; simplistic noise model; single optically gated metal-semiconductor-fieid-effect transistor; Indium gallium arsenide; Integrated circuit noise; Integrated circuit technology; MESFETs; MMICs; Optical noise; Optical receivers; Optoelectronic devices; Photodetectors; Preamplifiers;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.754797

Filename

754797