Title :
Evaluation of the performance of TaN diffusion barrier against copper diffusion using SIMS and AFM
Author :
Teh, W.H. ; Koh, L.T. ; Chen, S.M. ; Xie, J. ; Li, C.Y. ; Foo, P.D.
Author_Institution :
Nat. Univ. of Singapore, Singapore
fDate :
5/10/2001 12:00:00 AM
Abstract :
The reliability of a multilayer ionised metal plasma (IMP) Cu/IMP TaN plasma enhanced chemical vapour deposited SiO2/Si film structure with different thickness of TaN (10-30 nm) is studied. AFM pictures of the surface morphology show roughening after annealing, indicating possible grain growth. SIMS shows abrupt broadening of the mixed regions at 600°C for the 10 nm thick TaN barrier and at 800°C for the 30 nm thick TaN barrier
Keywords :
atomic force microscopy; chemical interdiffusion; copper; diffusion barriers; grain growth; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; rough surfaces; secondary ion mass spectra; surface topography; tantalum compounds; 10 to 30 nm; 600 to 800 C; AFM; Cu diffusion; Cu-TaN-SiO2-Si; PECVD SiO2/Si film structure; SIMS; TaN diffusion barrier; grain growth; ionised metal plasma Cu; ionised metal plasma TaN; multilayer structure; plasma enhanced CVD SiO2; reliability; roughening; surface morphology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010390
