• DocumentCode
    1491831
  • Title

    Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

  • Author

    Klein, P.B. ; Binari, S.C. ; Ikossi-Anastasiou, K. ; Wickenden, A.E. ; Koleske, D.D. ; Henry, R.L. ; Katzer, D.S.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    37
  • Issue
    10
  • fYear
    2001
  • fDate
    5/10/2001 12:00:00 AM
  • Firstpage
    661
  • Lastpage
    662
  • Abstract
    Current collapse in AlGaN/GaN HEMTs has been investigated using photo-ionisation spectroscopy techniques to probe the spatial origins of the traps producing this effect. The results indicate that the responsible traps reside in the high-resistivity GaN buffer layer and are identical to those traps causing current collapse in GaN MESFETs
  • Keywords
    III-V semiconductors; aluminium compounds; deep levels; electric current; gallium compounds; interface states; microwave field effect transistors; microwave power transistors; photoionisation; power HEMT; spectra; two-dimensional electron gas; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMTs; current collapse producing traps; high electron mobility transistors; high-resistivity GaN buffer layer; photo-ionisation spectroscopy techniques;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010434
  • Filename
    923998
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1491831