Title :
Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors
Author :
Klein, P.B. ; Binari, S.C. ; Ikossi-Anastasiou, K. ; Wickenden, A.E. ; Koleske, D.D. ; Henry, R.L. ; Katzer, D.S.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
5/10/2001 12:00:00 AM
Abstract :
Current collapse in AlGaN/GaN HEMTs has been investigated using photo-ionisation spectroscopy techniques to probe the spatial origins of the traps producing this effect. The results indicate that the responsible traps reside in the high-resistivity GaN buffer layer and are identical to those traps causing current collapse in GaN MESFETs
Keywords :
III-V semiconductors; aluminium compounds; deep levels; electric current; gallium compounds; interface states; microwave field effect transistors; microwave power transistors; photoionisation; power HEMT; spectra; two-dimensional electron gas; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMTs; current collapse producing traps; high electron mobility transistors; high-resistivity GaN buffer layer; photo-ionisation spectroscopy techniques;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010434
