Monolithically integrated 780-nm-band high-power and 650-nm-band laser diodes with real refractive index guided self-aligned structure

Author

Onishi, Toshikazu ; Imafuji, Osamu ; Fukuhisa, Toshiya ; Mochida, Atsunori ; Kobayashi, Yasuhiro ; Yuri, Masaaki ; Itoh, Kunio ; Shimizu, Hirokazu

Author_Institution

Semicond. Co., Matsushita Electr. Ind. Co. Ltd., Kyoto, Japan

Volume

13

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

550

Lastpage

552

Abstract

780-nm-band high-power and 650-nm-band laser diodes (LDs) with real refractive index guided self-aligned (RISA) structures are monolithically integrated for the first time. High-power and fundamental transverse mode operation at an output power of 100-mW continuous wave (CW) up to 80/spl deg/C is attained for the 780-nm-band LD. For the 650-nm-band LD, high temperature and fundamental transverse mode operation at an output power of 10-mW CW up to 80/spl deg/C is obtained.

Keywords

MOCVD; integrated optics; laser beams; laser modes; optical fabrication; quantum well lasers; refractive index; semiconductor lasers; waveguide lasers; 10 mW; 100 mW; 650 nm; 780 nm; 80 C; AlGaAs; AlGaInP; CW operation; continuous wave operation; fundamental transverse mode operation; high temperature operation; high-power laser diodes; high-power mode operation; laser diodes; monolithically integrated laser diodes; output power; real refractive index guided self-aligned structure; refractive index; refractive index guided self-aligned structure; self-aligned structures; DVD; Diode lasers; Laser modes; Optical devices; Optical recording; Optical refraction; Optical variables control; Optical waveguides; Power generation; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.924016

Filename

924016