• DocumentCode
    1492179
  • Title

    A 4K Josephson memory

  • Author

    Suzuki, H. ; Fujimaki, N. ; Tamura, H. ; Imamura, T. ; Hasuo, S.

  • Author_Institution
    Fujitsu Ltd., Atsugi, Japan
  • Volume
    25
  • Issue
    2
  • fYear
    1989
  • fDate
    3/1/1989 12:00:00 AM
  • Firstpage
    783
  • Lastpage
    788
  • Abstract
    The authors describe the design and experimental performance of a 4 K×1-bit Josephson (RAM). For high-speed memory operation, the authors have developed a compact AND gate for the decoder, a high-voltage driver gate, and a capacitively coupled single-flux quantum memory cell. The 4 K memory was designed using these gates and cell and was fabricated with Nb/AlOx/Nb junctions. The minimum access time was 590 ps, and the total power dissipation was 19 mW
  • Keywords
    aluminium compounds; integrated circuit technology; integrated memory circuits; niobium; random-access storage; superconducting junction devices; superconducting memory circuits; 19 mW; 4 kbit; 590 ps; AND gate; Josephson memory; Nb-AlOx-Nb junctions; RAM; access time; capacitively coupled single-flux quantum memory cell; experimental performance; high-speed memory operation; high-voltage driver gate; power dissipation; Decoding; Equivalent circuits; Josephson junctions; Logic gates; Niobium; Power dissipation; Power measurement; Time measurement; Timing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.92404
  • Filename
    92404
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1492179