Enhancement of current driving capability in data driver ICs for plasma display panels

The design and experimental results of a 192-bit low-cost and high-current-driving PDP data driver IC implemented in a 100 V silicon-on-insulator (SOI) lateral double-diffused MOS (LDMOS) process are presented. The LDMOSFET is the device of a choice in this design, because it is compatible with low-voltage transistors for logic circuits. To maximize the current driving capability and protect the pull-up n-channel LDMOSFET of the output buffet, zener diode circuits are established between the gate and source of the transistor, by which the current driving capability double without increasing the transistor size. The circuit area is further saved through replacement of two high-voltage LDMOSFETs with low- voltage transistors in the level shifter, which is possible by inserting a blocking transistor. The PDP data driver IC with the proposed output buffer and level shifter has been designed for 60-inch WXGA-format PDPs.