A Novel BJT Structure Implemented Using CMOS Processes for High-Performance Analog Circuit Applications

In this paper, a novel bipolar junction transistor (BJT) structure is proposed for high matching characteristics and its performance is compared with a conventional BJT structure. Although the proposed BJT matching structure indicates a decrease of collector current density $J_{C}$ and current gain $\beta$ of about 5.36% and 1.02% compared with those of the conventional BJT structure, the matching characteristics of the collector current $(A_{\rm IC})$ and the current gain $(A_{\beta })$ for the proposed structure are improved by about 31% and 24%. The improved matching characteristic of the proposed structure is believed to be due to the reduced effect of the deep n-well or the reduced current path from emitter to collector.