Title :
Single superconducting thin film devices for applications in high Tc materials circuits
Author :
Hohenwarter, G.K.G. ; Martens, J.S. ; McGinnis, D.P. ; Beyer, J.B. ; Nordman, J.E. ; Ginley, D.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
fDate :
3/1/1989 12:00:00 AM
Abstract :
The authors investigated several different devices based on regions of weak superconductivity and multiple parallel links in thin films. Devices were fabricated with Nb and YBa2Cu3O7-x films. Hysteretic symmetric and asymmetric I-V (current-voltage) curves have been observed. Flux flow was indicated. Device switching properties and the dependence of the flux-flow signature in the I-V curve on applied magnetic field were explored. Contrary to vortex flow devices based on Josephson junctions, the devices described here do not possess a tunnelling barrier and are made of only a single superconducting layer. Hence they should be applicable to electronic circuits based on high-Tc superconducting materials without the need for tunnel junctions
Keywords :
barium compounds; high-temperature superconductors; niobium; superconducting junction devices; superconducting thin films; yttrium compounds; asymmetric I-V; electronic circuits; flux-flow signature; high temperature superconductor; multiple parallel links; superconducting thin film devices; symmetric I-V; weak superconductivity; Josephson junctions; Magnetic fields; Magnetic hysteresis; Magnetic properties; Magnetic switching; Niobium; Superconducting films; Superconducting thin films; Superconductivity; Thin film devices;
Journal_Title :
Magnetics, IEEE Transactions on
