DocumentCode
1492836
Title
Single superconducting thin film devices for applications in high T c materials circuits
Author
Hohenwarter, G.K.G. ; Martens, J.S. ; McGinnis, D.P. ; Beyer, J.B. ; Nordman, J.E. ; Ginley, D.S.
Author_Institution
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Volume
25
Issue
2
fYear
1989
fDate
3/1/1989 12:00:00 AM
Firstpage
954
Lastpage
956
Abstract
The authors investigated several different devices based on regions of weak superconductivity and multiple parallel links in thin films. Devices were fabricated with Nb and YBa2Cu3O7-x films. Hysteretic symmetric and asymmetric I -V (current-voltage) curves have been observed. Flux flow was indicated. Device switching properties and the dependence of the flux-flow signature in the I -V curve on applied magnetic field were explored. Contrary to vortex flow devices based on Josephson junctions, the devices described here do not possess a tunnelling barrier and are made of only a single superconducting layer. Hence they should be applicable to electronic circuits based on high-T c superconducting materials without the need for tunnel junctions
Keywords
barium compounds; high-temperature superconductors; niobium; superconducting junction devices; superconducting thin films; yttrium compounds; asymmetric I-V; electronic circuits; flux-flow signature; high temperature superconductor; multiple parallel links; superconducting thin film devices; symmetric I-V; weak superconductivity; Josephson junctions; Magnetic fields; Magnetic hysteresis; Magnetic properties; Magnetic switching; Niobium; Superconducting films; Superconducting thin films; Superconductivity; Thin film devices;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.92446
Filename
92446
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