• DocumentCode
    1493113
  • Title

    An Interconnect-Line-Size Optimization Model Considering Scattering Effect

  • Author

    Zhu, Zhangming ; Wan, Dajing ; Yang, Yintang

  • Author_Institution
    Inst. of Microelectron., Xidian Univ., Xi´´an, China
  • Volume
    31
  • Issue
    7
  • fYear
    2010
  • fDate
    7/1/2010 12:00:00 AM
  • Firstpage
    641
  • Lastpage
    643
  • Abstract
    Based on the impact of the scattering effect on latency and bandwidth, this letter presents the quality-factor model that optimizes latency and bandwidth effectively with consideration of the scattering effect. Then, we get the optimization analytical model with target interconnect linewidth and line spacing by the curve-fitting method. The proposed model has been verified and compared for nanoscale CMOS technology. The optimization model is simple, and we can apply it to the interconnect system optimal design of nano-CMOS integrated circuits.
  • Keywords
    CMOS integrated circuits; Q-factor; circuit optimisation; curve fitting; electromagnetic wave scattering; integrated circuit interconnections; nanoelectronics; curve fitting; interconnect linewidth; interconnect system optimal design; interconnect-line-size optimization model; line spacing; nanoCMOS integrated circuit; nanoscale CMOS technology; optimization analytical model; quality-factor model; scattering effect; Bandwidth; curve fitting; interconnect line size; latency; scattering effect;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2047238
  • Filename
    5466091