DocumentCode
1493113
Title
An Interconnect-Line-Size Optimization Model Considering Scattering Effect
Author
Zhu, Zhangming ; Wan, Dajing ; Yang, Yintang
Author_Institution
Inst. of Microelectron., Xidian Univ., Xi´´an, China
Volume
31
Issue
7
fYear
2010
fDate
7/1/2010 12:00:00 AM
Firstpage
641
Lastpage
643
Abstract
Based on the impact of the scattering effect on latency and bandwidth, this letter presents the quality-factor model that optimizes latency and bandwidth effectively with consideration of the scattering effect. Then, we get the optimization analytical model with target interconnect linewidth and line spacing by the curve-fitting method. The proposed model has been verified and compared for nanoscale CMOS technology. The optimization model is simple, and we can apply it to the interconnect system optimal design of nano-CMOS integrated circuits.
Keywords
CMOS integrated circuits; Q-factor; circuit optimisation; curve fitting; electromagnetic wave scattering; integrated circuit interconnections; nanoelectronics; curve fitting; interconnect linewidth; interconnect system optimal design; interconnect-line-size optimization model; line spacing; nanoCMOS integrated circuit; nanoscale CMOS technology; optimization analytical model; quality-factor model; scattering effect; Bandwidth; curve fitting; interconnect line size; latency; scattering effect;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2047238
Filename
5466091
Link To Document