• DocumentCode
    1493219
  • Title

    Laser Diodes for Gas Sensing Emitting at 3.06 \\mu m at Room Temperature

  • Author

    Belahsene, Sofiane ; Naehle, Lars ; Fischer, Marc ; Koeth, Johannes ; Boissier, Guilhem ; Grech, Pierre ; Narcy, Grégoire ; Vicet, Aurore ; Rouillard, Yves

  • Author_Institution
    Inst. d´´Electron. du Sud, Univ. Montpellier 2, Montpellier, France
  • Volume
    22
  • Issue
    15
  • fYear
    2010
  • Firstpage
    1084
  • Lastpage
    1086
  • Abstract
    Type-I quantum-well laser diodes with an active region constituted of GaInAsSb-AlGaInAsSb are reported. Broad-area lasers have demonstrated a threshold current density of 255 A/cm2 at room temperature. Distributed-feedback lasers have been operated in the continuous-wave regime at 20°C with a wavelength of 3.06 μm, a threshold current of 54 mA, and an output power of 6 mW.
  • Keywords
    III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium compounds; gas sensors; quantum well lasers; active region; broadarea lasers; continuous wave regime; current 54 MA; distributed feedback lasers; gas sensing; output power; temperature 20 degC; temperature 293 K to 298 K; threshold current density; type-I quantum-well laser diodes; wavelength 3.06 mum; Distributed-feedback (DFB) lasers; quantum-well (QW) lasers; semiconductor lasers; spectroscopy;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2010.2049989
  • Filename
    5466105
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1493219