DocumentCode :
1493219
Title :
Laser Diodes for Gas Sensing Emitting at 3.06 
m at Room Temperature
Author :
Belahsene, Sofiane ; Naehle, Lars ; Fischer, Marc ; Koeth, Johannes ; Boissier, Guilhem ; Grech, Pierre ; Narcy, Grégoire ; Vicet, Aurore ; Rouillard, Yves
Author_Institution :
Inst. d´´Electron. du Sud, Univ. Montpellier 2, Montpellier, France
Volume :
22
Issue :
15
fYear :
2010
Firstpage :
1084
Lastpage :
1086
Abstract :
Type-I quantum-well laser diodes with an active region constituted of GaInAsSb-AlGaInAsSb are reported. Broad-area lasers have demonstrated a threshold current density of 255 A/cm2 at room temperature. Distributed-feedback lasers have been operated in the continuous-wave regime at 20°C with a wavelength of 3.06 μm, a threshold current of 54 mA, and an output power of 6 mW.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium compounds; gas sensors; quantum well lasers; active region; broadarea lasers; continuous wave regime; current 54 MA; distributed feedback lasers; gas sensing; output power; temperature 20 degC; temperature 293 K to 298 K; threshold current density; type-I quantum-well laser diodes; wavelength 3.06 mum; Distributed-feedback (DFB) lasers; quantum-well (QW) lasers; semiconductor lasers; spectroscopy;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2049989
Filename :
5466105
Link To Document :
