• DocumentCode
    1493443
  • Title

    Band-Edge High-Performance Metal-Gate/High- \\kappa nMOSFET Using \\hbox {Hf}{-}\\hbox {Si}/\\hbox {HfO}</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Ando, Takashi ; Hirano, Tomoyuki ; Tai, Kaori ; Yamaguchi, Shinpei ; Yoshida, Shinichi ; Iwamoto, Hayato ; Kadomura, Shingo ; Watanabe, Heiji</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Dept. of Mater. & Life Sci., Osaka Univ., Suita, Japan</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>56</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>12</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2009</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>3223</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>3227</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>A record high electron mobility (248 cm<sup>2</sup>/V middots at <i>E</i> <sub>eff</sub> of 1 MV/cm) was obtained at <i>T</i> <sub>inv</sub> of 1.47 nm, with a band-edge effective work function, by a Hf-Si/HfO<sub>2</sub> stack using gate-last process, resulting in <i>I</i> <sub>ON</sub> of 1178 muA/mum (<i>I</i> <sub>OFF</sub> of 100 nA/ mum ) at <i>V</i> <sub>dd</sub> of 1.0 V for a 45-nm gate nMOSFET without strain-enhanced technology.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>MOSFET; elemental semiconductors; hafnium; silicon; Hf-Si-HfO<sub>2</sub>; band-edge high-performance metal-gate MOSFET; gate-last process; high electron mobility; high-kappa nMOSFET; size 45 nm; voltage 1 V; Annealing; Atomic layer deposition; CMOS technology; Dielectrics; Electrodes; Electron mobility; Hafnium oxide; Integrated circuit technology; MOSFET circuits; Semiconductor materials; Gate-last process; hafnium oxide; hafnium silicide; high-<formula formulatype=$kappa$ dielectric; metal gate;

  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2009.2030432
  • Filename
    5280264
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1493443