مرکز منطقه ای اطلاع رساني علوم و فناوري - Band-Edge High-Performance Metal-Gate/High-<formula formulatype="inline"> <img src="/images/tex/19182.gif" alt="\\kappa "> </formula> nMOSFET Using <formula formulatype="inline"> <img src="/images/tex/17286.gif" alt="\\hbox {Hf}{-}\\hbox {Si}/\\hbox {HfO}

Title :

Band-Edge High-Performance Metal-Gate/High- $\\kappa$ nMOSFET Using $\\hbox {Hf}{-}\\hbox {Si}/\\hbox {HfO}</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Ando, Takashi ; Hirano, Tomoyuki ; Tai, Kaori ; Yamaguchi, Shinpei ; Yoshida, Shinichi ; Iwamoto, Hayato ; Kadomura, Shingo ; Watanabe, Heiji</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Mater. & Life Sci., Osaka Univ., Suita, Japan</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>56</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>12</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2009</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>3223</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>3227</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>A record high electron mobility (248 cm<sup>2</sup>/V middots at <i>E</i> <sub>eff</sub> of 1 MV/cm) was obtained at <i>T</i> <sub>inv</sub> of 1.47 nm, with a band-edge effective work function, by a Hf-Si/HfO<sub>2</sub> stack using gate-last process, resulting in <i>I</i> <sub>ON</sub> of 1178 muA/mum (<i>I</i> <sub>OFF</sub> of 100 nA/ mum ) at <i>V</i> <sub>dd</sub> of 1.0 V for a 45-nm gate nMOSFET without strain-enhanced technology.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>MOSFET; elemental semiconductors; hafnium; silicon; Hf-Si-HfO<sub>2</sub>; band-edge high-performance metal-gate MOSFET; gate-last process; high electron mobility; high-kappa nMOSFET; size 45 nm; voltage 1 V; Annealing; Atomic layer deposition; CMOS technology; Dielectrics; Electrodes; Electron mobility; Hafnium oxide; Integrated circuit technology; MOSFET circuits; Semiconductor materials; Gate-last process; hafnium oxide; hafnium silicide; high-<formula formulatype=$ $kappa$ dielectric; metal gate;