High-Temperature Stability of Lasing Wavelength in GaAsSb/GaAs QW Lasers

Author

Wan, Cheng-Tien ; Su, Yan-Kuin ; Chuang, Ricky W. ; Yu, Hsin-Chieh ; Huang, Chun-Yuan ; Wang, Yi-Shin ; Chen, Wei-Cheng ; Lin, Wei-Heng ; Pilkuhn, Manfred H.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

30

Issue

11

fYear

2009

Firstpage

1155

Lastpage

1157

Abstract

In this letter, we report the high-temperature stability of a lasing wavelength in GaAsSb/GaAs quantum-well (QW) lasers grown by metal-organic vapor phase epitaxy. To the best of our knowledge, this is the first successful use of triethylgallium (TEGa) as the precursor to grow GaAsSb/GaAs QW at low temperature (525degC). The lasing wavelength ranges from 1117 to 1144 nm and varies with temperature (dlambda/dT) from 0.24 to 0.287 nm/K. These values are lower than those of other results reported previously. The QW grown at high temperature (600degC) using trimethylgallium (TMGa) is also examined. The lasing wavelength is 1125.6 nm at room temperature, and dlambda/dT is 0.36 nm/K; the latter value is higher than those grown at lower temperature.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; laser stability; quantum well lasers; semiconductor quantum wells; vapour phase epitaxial growth; GaAsSb-GaAs; high-temperature stability; lasing wavelength; metal-organic vapor phase epitaxy; quantum-well lasers; temperature 293 K to 298 K; temperature 525 degC; temperature 600 degC; triethylgallium; wavelength 1117 nm to 1144 nm; wavelength 1125.6 nm; GaAsSb; MOVPE; lasers; lasing wavelength stability against temperature shift;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2031131

Filename

5280283