• DocumentCode
    1493600
  • Title

    Current-Density Dependence on Ag eFUSEs With TiN Underlayers

  • Author

    Indluru, Anil ; Misra, Ekta ; Alford, Terry L.

  • Author_Institution
    Sch. of Mech., Aerosp., Chem. & Mater. Eng., Arizona State Univ., Tempe, AZ, USA
  • Volume
    30
  • Issue
    11
  • fYear
    2009
  • Firstpage
    1134
  • Lastpage
    1136
  • Abstract
    Silver-based metallization has been studied for a potential application as an electrically programmable fuse (eFUSE) device by local Joule heating induced at high current densities. Three different line widths (3.8, 6.3, and 10 mum) are investigated by subjecting them to extremely high current-density conditions. Based on short median lifetime and the topography of the failure sites, the dominant failure mechanism in Ag eFUSEs with TiN barrier layer under these current densities is examined. Evaporation times have also been calculated to correlate the Ag properties with the median failure time. The barrier layer has an important role to play in determining the failure time in these types of eFUSEs.
  • Keywords
    current density; electric fuses; failure analysis; programmable circuits; semiconductor device metallisation; semiconductor device reliability; silver; titanium compounds; Ag-TiN-SiO2; Joule heating; barrier layer; current density; eFUSE; electrically programmable fuse; evaporation times; failure; median lifetime; metallization; Electromigration; fuses; silver;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2031257
  • Filename
    5280289