DocumentCode
1493600
Title
Current-Density Dependence on Ag eFUSEs With TiN Underlayers
Author
Indluru, Anil ; Misra, Ekta ; Alford, Terry L.
Author_Institution
Sch. of Mech., Aerosp., Chem. & Mater. Eng., Arizona State Univ., Tempe, AZ, USA
Volume
30
Issue
11
fYear
2009
Firstpage
1134
Lastpage
1136
Abstract
Silver-based metallization has been studied for a potential application as an electrically programmable fuse (eFUSE) device by local Joule heating induced at high current densities. Three different line widths (3.8, 6.3, and 10 mum) are investigated by subjecting them to extremely high current-density conditions. Based on short median lifetime and the topography of the failure sites, the dominant failure mechanism in Ag eFUSEs with TiN barrier layer under these current densities is examined. Evaporation times have also been calculated to correlate the Ag properties with the median failure time. The barrier layer has an important role to play in determining the failure time in these types of eFUSEs.
Keywords
current density; electric fuses; failure analysis; programmable circuits; semiconductor device metallisation; semiconductor device reliability; silver; titanium compounds; Ag-TiN-SiO2; Joule heating; barrier layer; current density; eFUSE; electrically programmable fuse; evaporation times; failure; median lifetime; metallization; Electromigration; fuses; silver;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2031257
Filename
5280289
Link To Document