• DocumentCode
    1493656
  • Title

    A Single-Polarity Piezoresistive Three-Dimensional Stress-Sensing Rosette

  • Author

    Gharib, H.H. ; Moussa, W.A.

  • Author_Institution
    Dept. of Mech. Eng., Univ. of Alberta, Edmonton, AB, Canada
  • Volume
    20
  • Issue
    3
  • fYear
    2011
  • fDate
    6/1/2011 12:00:00 AM
  • Firstpage
    555
  • Lastpage
    557
  • Abstract
    This letter presents a study on the feasibility of a new approach for developing a piezoresistive (PR) stress-sensing rosette that is capable of extracting the six stress components with temperature compensation using single-polarity sensing elements (n-type only). Current publicly available PR 3-D stress rosettes extract only four temperature-compensated stresses using a dual-polarity (n- and p-type) rosette. Our proposed approach generates a new set of independent equations based on varying the impurity concentration of the sensing elements and utilizes the distinct properties of the shear PR coefficient (π44) in n-Si. Fabrication of a single-polarity rosette requires less equipment compared to that of a dual-polarity rosette and helps reduce the footprint of the rosette.
  • Keywords
    compensation; piezoresistive devices; 3D stress rosettes; piezoresistive stress-sensing rosette; single-polarity sensing elements; single-polarity three-dimensional stress-sensing rosette; temperature compensation; Equations; Impurities; Piezoresistance; Silicon; Stress; Temperature sensors; Doping; piezoresistance; piezoresistive (PR) devices; stress sensor; temperature compensation;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2011.2127458
  • Filename
    5749676