DocumentCode
1493662
Title
A Micro Nuclear Battery Based on SiC Schottky Barrier Diode
Author
Qiao, Da-yong ; Chen, Xue-Jiao ; Ren, Yong ; Yuan, Wei-Zheng
Author_Institution
Micro & Nano Electromech. Syst. Lab., Northwestern Polytech. Univ., Xi´´an, China
Volume
20
Issue
3
fYear
2011
fDate
6/1/2011 12:00:00 AM
Firstpage
685
Lastpage
690
Abstract
Based on the betavoltaic and alphavoltaic effects, a 4H-SiC micronuclear battery was demonstrated. A Schottky barrier diode, in place of the previously used p-n junction diode, was utilized for carrier separation. A theoretical model was derived to predict the output electrical power. Using beta radioisotope 63Ni and alpha radioisotope 241Am as the radiation sources, the micro nuclear battery was tested and proved to be effective to transfer decay energy into electrical power. The experimental results show that the theoretical model can basically predict the performance of the micronuclear battery. Although the energy conversion efficiencies under illumination of 63Ni and 241Am are only 0.5% and 0.1% at current status, an improvement by an order of magnitude can be expected if the doping concentration of the epilayer can be decreased to the optimal value.
Keywords
Schottky barriers; Schottky diodes; p-n junctions; photovoltaic cells; silicon compounds; wide band gap semiconductors; 4H-SiC micronuclear battery; Schottky barrier diode; SiC; alpha radioisotope; alphavoltaic effects; beta radioisotope; betavoltaic effects; doping concentration; electrical power; p-n junction diode; Batteries; Metals; Radioactive materials; Schottky barriers; Schottky diodes; Silicon carbide; Betavoltaic; Schottky barrier diode; micro nuclear batteries; silicon carbide;
fLanguage
English
Journal_Title
Microelectromechanical Systems, Journal of
Publisher
ieee
ISSN
1057-7157
Type
jour
DOI
10.1109/JMEMS.2011.2127448
Filename
5749677
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