• DocumentCode
    1493662
  • Title

    A Micro Nuclear Battery Based on SiC Schottky Barrier Diode

  • Author

    Qiao, Da-yong ; Chen, Xue-Jiao ; Ren, Yong ; Yuan, Wei-Zheng

  • Author_Institution
    Micro & Nano Electromech. Syst. Lab., Northwestern Polytech. Univ., Xi´´an, China
  • Volume
    20
  • Issue
    3
  • fYear
    2011
  • fDate
    6/1/2011 12:00:00 AM
  • Firstpage
    685
  • Lastpage
    690
  • Abstract
    Based on the betavoltaic and alphavoltaic effects, a 4H-SiC micronuclear battery was demonstrated. A Schottky barrier diode, in place of the previously used p-n junction diode, was utilized for carrier separation. A theoretical model was derived to predict the output electrical power. Using beta radioisotope 63Ni and alpha radioisotope 241Am as the radiation sources, the micro nuclear battery was tested and proved to be effective to transfer decay energy into electrical power. The experimental results show that the theoretical model can basically predict the performance of the micronuclear battery. Although the energy conversion efficiencies under illumination of 63Ni and 241Am are only 0.5% and 0.1% at current status, an improvement by an order of magnitude can be expected if the doping concentration of the epilayer can be decreased to the optimal value.
  • Keywords
    Schottky barriers; Schottky diodes; p-n junctions; photovoltaic cells; silicon compounds; wide band gap semiconductors; 4H-SiC micronuclear battery; Schottky barrier diode; SiC; alpha radioisotope; alphavoltaic effects; beta radioisotope; betavoltaic effects; doping concentration; electrical power; p-n junction diode; Batteries; Metals; Radioactive materials; Schottky barriers; Schottky diodes; Silicon carbide; Betavoltaic; Schottky barrier diode; micro nuclear batteries; silicon carbide;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2011.2127448
  • Filename
    5749677