Title :
Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns
Author :
Huang, Hung-Wen ; Lin, Chung-Hsiang ; Huang, Zhi-Kai ; Lee, Kang-Yuan ; Yu, Chang-Chin ; Kuo, Hao-Chung
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The enhancement of light extraction from GaN-based light-emitting diodes (LEDs) with a double 12-fold photonic quasi-crystal (PQC) structure using nanoimprint lithography is presented. At a driving current of 20 mA on a transistor-outline-can package, the light output power of an LED with a nanohole patterned sapphire substrate (NHPSS) and an LED with a double PQC structure are enhanced by 34% and 61%, compared with the conventional LED. In addition, the higher output power of the LED with the double PQC structure is due to better reflectance on NHPSS and higher scattering effect on p-GaN surface using a 12-fold PQC structure pattern. These results provide promising potential to increase the output powers of commercial light-emitting devices.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; photonic crystals; wide band gap semiconductors; GaN; LED; current 20 mA; double photonic quasicrystal patterns; driving current; light output power; light-emitting diodes; nanohole patterned sapphire substrate; nanoimprint lithography; p-GaN surface; scattering effect; transistor-outline-can package; Gallium nitride (GaN); light-emitting diodes (LEDs); nanoimprint lithography (NIL); photonic quasi-crystal (PQC);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2029985
