Title :
High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies
Author :
Chen, C.H. ; Fang, Y.K. ; Yang, C.W. ; Ting, S.-F. ; Tsair, Y.S. ; Wang, M.F. ; Lin, Y.M. ; Yu, M.C. ; Chen, S.C. ; Yu, C.H. ; Liang, M.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
6/1/2001 12:00:00 AM
Abstract :
Ultrathin nitride/oxide (N/O) gate dielectric stacks with equivalent oxide thickness of 1.6 nm have been fabricated by combining remote plasma nitridation (RPN) and low pressure chemical vapor deposition (LPCVD) technologies. NMOSFETs with these gate stacks exhibit good interface properties, improved subthreshold characteristics, low off-state currents, enhanced reliability, and about one order of magnitude reduction in gate leakage current to their oxide counterparts.
Keywords :
CMOS integrated circuits; MOSFET; chemical vapour deposition; dielectric thin films; leakage currents; nitridation; plasma materials processing; semiconductor device reliability; 1.6 nm; CMOS fabrication; LPCVD; NMOSFET; SiO/sub 2/-Si/sub 3/N/sub 4/; equivalent oxide thickness; gate leakage current; high-quality ultrathin nitride/oxide stack gate dielectrics; interface properties; low pressure chemical vapor deposition; off-state current; reliability; remote plasma nitridation; subthreshold characteristics; Chemical technology; Chemical vapor deposition; Dielectrics; Impurities; Leakage current; MOSFETs; Nitrogen; Plasma chemistry; Plasma properties; Silicon compounds;
Journal_Title :
Electron Device Letters, IEEE
