Fully monolithic CMOS RF power amplifiers: recent advances

Author

Gupta, Ravi ; Allstot, David J.

Author_Institution

Maxim Integrated Products, Sunnyvale, CA, USA

Volume

37

Issue

4

fYear

1999

fDate

4/1/1999 12:00:00 AM

Firstpage

94

Lastpage

98

Abstract

The transmit RF power amplifiers remain one of the most challenging building blocks for wireless transmitters. This article is intended to provide the reader with an understanding of the basic operation of Class A, B, AB, and C RF power amplifiers. With the numerous advantages associated with highly integrated transceiver implementations in mind, some examples of designs of integrated power amplifiers, as opposed to discrete or hybrid implementations, are enumerated. These examples also give the reader an understanding of the current trend in the design and implementation of fully integrated RF power amplifiers in CMOS and other silicon-based technologies

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; integrated circuit design; linear network synthesis; nonlinear network synthesis; power amplifiers; radio transmitters; radiofrequency amplifiers; BiCMOS process; CAD tool; Class A power amplifier; Class AB amplifier; Class B amplifier; Class C amplifier; Si; integrated RF power amplifiers; integrated transceiver; linear power amplifiers; monolithic CMOS RF power amplifiers; nonlinear power amplifiers; silicon-based technologies; transmit RF power amplifiers; wireless transmitters; CMOS technology; Filters; Frequency shift keying; Operational amplifiers; Power amplifiers; Pulse modulation; Radio frequency; Radio transmitters; Radiofrequency amplifiers; Transceivers;

fLanguage

English

Journal_Title

Communications Magazine, IEEE

Publisher

ieee

ISSN

0163-6804

Type

jour

DOI

10.1109/35.755456

Filename

755456