On the mobility versus drain current relation for a nanoscale MOSFET

Author

Lundstrom, Mark S.

Author_Institution

Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

22

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

293

Lastpage

295

Abstract

The dependence of the linear and saturated drain current of a nanoscale MOSFET on the near-equilibrium, inversion layer mobility of a long-channel device from the same technology is examined. Simple expressions developed from a scattering theory of the MOSFET provide a quantitative relation between the long-channel mobility and the short-channel drain current. The theory explains the commonly observed mobility-dependence of the linear and saturated drain currents in present-day deep submicron MOSFETs, and the results can be extrapolated all the way to the ballistic limit.

Keywords

MOSFET; carrier mobility; high field effects; inversion layers; nanotechnology; semiconductor device models; ballistic limit; deep submicron MOSFETs; linear drain current; long-channel mobility; mobility versus drain current relation; nanoscale MOSFET; near-equilibrium inversion layer mobility; saturated drain current; scattering theory; short-channel drain current; velocity overshoot; Backscatter; Charge carrier mobility; Current measurement; Helium; MOSFET circuits; Nanoscale devices; Predictive models; Region 7; Scattering; Statistics;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.924846

Filename

924846