Title :
An on-chip temperature sensor by utilizing a MOS tunneling diode
Author :
Shih, Yen-Hao ; Hwu, Jenn-Gwo
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
6/1/2001 12:00:00 AM
Abstract :
A simple metal-oxide-semiconductor (MOS) tunneling diode was demonstrated for application to an integrated temperature sensor. The MOS diode equipped with a 21-/spl Aring/ oxide was biased inversely at 1.8 V to monitor its substrate temperature through gate current. The gate current increased more than 700 times when the diode was heated from 20 to 110/spl deg/C. An exponential fitting curve correlated the gate current and the substrate temperature. Moreover, characteristics of the diode were analyzed though C-V and I/sub 1.8 V/-n/sub i/ curves. The good temperature response of the MOS tunneling diode might be useful in self-diagnosis or self-protection IC applications.
Keywords :
MIS devices; electric sensing devices; protection; temperature sensors; tunnel diodes; 1.8 V; 20 to 110 C; 21 angstrom; C-V characteristics; MOS tunneling diode; Si-SiO/sub 2/; exponential fitting curve; gate current; integrated temperature sensor; inverse bias; on-chip temperature sensor; self-diagnosis IC applications; self-protection IC applications; substrate temperature; CMOS technology; Lithography; Rapid thermal processing; Semiconductor diodes; Silicon; Substrates; Temperature sensors; Thermal sensors; Transistors; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
