DocumentCode
1493929
Title
Dielectric constant of evaporated SiO at frequencies between 13 and 103 GHz
Author
Olsson, H.K.
Author_Institution
Dept. of Phys., Chalmers Univ. of Technol., Goteborg, Sweden
Volume
25
Issue
2
fYear
1989
fDate
3/1/1989 12:00:00 AM
Firstpage
1115
Lastpage
1118
Abstract
An integrated Josephson tunnel junction and microstrip resonator have been used to determine the dielectric constant of evaporated SiO. The method is straightforward in that it uses conventional microwave techniques to calculate the impedances for different frequencies and parasitic effects are negligible. A frequency-independent value of 5.5±0.4 was calculated for the 13- to 103-GHz range. At each resonant frequency a step appeared at the corresponding voltage in the current-voltage curve. For each resonant frequency, a dielectric constant was calculated. The constant does not change appreciably from the average value of 5.5 throughout the whole frequency range, in agreement with previous measurements
Keywords
Josephson effect; dielectric thin films; microwave measurement; permittivity measurement; silicon compounds; vacuum deposited coatings; 13 to 103 GHz; EHF; Josephson tunnel junction; SHF; current-voltage curve; dielectric constant; evaporated SiO; impedances; microstrip resonator; microwave techniques; millimetre wave frequencies; permittivity; resonant frequency; thin film dielectrics; Dielectric constant; Dielectric measurements; Dielectric thin films; Distributed parameter circuits; Impedance; Microstrip; Power transmission lines; Resonance; Resonant frequency; Superconducting transmission lines;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.92485
Filename
92485
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