• DocumentCode
    1493929
  • Title

    Dielectric constant of evaporated SiO at frequencies between 13 and 103 GHz

  • Author

    Olsson, H.K.

  • Author_Institution
    Dept. of Phys., Chalmers Univ. of Technol., Goteborg, Sweden
  • Volume
    25
  • Issue
    2
  • fYear
    1989
  • fDate
    3/1/1989 12:00:00 AM
  • Firstpage
    1115
  • Lastpage
    1118
  • Abstract
    An integrated Josephson tunnel junction and microstrip resonator have been used to determine the dielectric constant of evaporated SiO. The method is straightforward in that it uses conventional microwave techniques to calculate the impedances for different frequencies and parasitic effects are negligible. A frequency-independent value of 5.5±0.4 was calculated for the 13- to 103-GHz range. At each resonant frequency a step appeared at the corresponding voltage in the current-voltage curve. For each resonant frequency, a dielectric constant was calculated. The constant does not change appreciably from the average value of 5.5 throughout the whole frequency range, in agreement with previous measurements
  • Keywords
    Josephson effect; dielectric thin films; microwave measurement; permittivity measurement; silicon compounds; vacuum deposited coatings; 13 to 103 GHz; EHF; Josephson tunnel junction; SHF; current-voltage curve; dielectric constant; evaporated SiO; impedances; microstrip resonator; microwave techniques; millimetre wave frequencies; permittivity; resonant frequency; thin film dielectrics; Dielectric constant; Dielectric measurements; Dielectric thin films; Distributed parameter circuits; Impedance; Microstrip; Power transmission lines; Resonance; Resonant frequency; Superconducting transmission lines;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.92485
  • Filename
    92485