Title :
Characterization of Selectively Deposited Cobalt Capping Layers: Selectivity and Electromigration Resistance
Author :
Yang, C. -C ; Flaitz, P. ; Wang, P.-C. ; Chen, F. ; Edelstein, D.
Author_Institution :
IBM Res., Yorktown Heights, NY, USA
fDate :
7/1/2010 12:00:00 AM
Abstract :
Co films were selectively deposited as Cu capping layers by chemical-vapor-deposition technique. X-ray fluorescence spectroscopy determined the Co deposition selectivity as a function of the deposition temperature and substrate materials. The Co/Cu interfacial property was characterized and revealed no detectable oxygen at the interface. The selectivity of the Co deposition process and the property of the resulted Co/Cu interface were further confirmed with time-dependent-dielectric-breakdown and electromigration tests.
Keywords :
X-ray fluorescence analysis; chemical vapour deposition; cobalt; electric breakdown; electromigration; interconnections; interface structure; metallic thin films; substrates; Co deposition selectivity; Co films; Co/Cu interfacial property; X-ray fluorescence spectroscopy; chemical-vapor-deposition; cobalt capping layers; deposition temperature; electromigration resistance; substrate materials; Chemical vapor deposition; cobalt; reliability;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2048298
