DocumentCode :
1494089
Title :
A 1-mW CMOS Temporal-Difference AER Sensor for Wireless Sensor Networks
Author :
Kim, Dongsoo ; Fu, Zhengming ; Park, Joon Hyuk ; Culurciello, Eugenio
Author_Institution :
Electr. Eng. Dept., Yale Univ., New Haven, CT, USA
Volume :
56
Issue :
11
fYear :
2009
Firstpage :
2586
Lastpage :
2593
Abstract :
In this paper, we report a 64 times 64 active pixel sensor, designed for low-power image sensing for wireless sensor networks. The proposed image sensor computes the temporal difference between two continuous frames and communicates them in an address-event representation format. The image sensor is capable of computing 30 temporal-difference frames per second (fps) and consumes 1 mW with a 3-V power supply. Light-intensity images are also available as an output at a speed of 60 fps. The image sensor was fabricated in a 0.5-mum bulk CMOS process. The fabricated sensor was tested with various stimuli to evaluate its performance. The die size is 3 mm times 3 mm, including pads and test structures. Each pixel occupies an area of 29 times 28 mum2 with a fill factor of 23%. The minimum detectable speed of the temporal-difference is 4.5deg/s.
Keywords :
CMOS image sensors; wireless sensor networks; CMOS temporal-difference AER sensor; active pixel sensor; address-event representation format; bulk CMOS process; image sensor; low-power image sensing; wireless sensor networks; Bandwidth; CMOS image sensors; CMOS process; Image sensors; Image storage; Intelligent sensors; Pixel; Power supplies; Testing; Wireless sensor networks; CMOS image sensor; low power; smart image sensor; smart sensor; temporal difference; wireless sensor networks (WSN);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2009.2030591
Filename :
5280365
Link To Document :
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