InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency

Author

Lövblom, Rickard ; Flückiger, Ralf ; Zeng, Yuping ; Ostinelli, Olivier ; Alt, Andreas R. ; Benedickter, Hansruedi ; Bolognesi, C.R.

Author_Institution

Millimeter-Wave Electron. Group, ETH-Zurich, Zürich, Switzerland

Volume

32

Issue

5

fYear

2011

fDate

5/1/2011 12:00:00 AM

Firstpage

629

Lastpage

631

Abstract

We report the realization of 0.3-μm emitter InP/GaAsSb/InP DHBTs with cutoff frequencies f_T = 365 GHz and f_MAX = 501 GHz. Our devices were implemented with a 15-nm C-doped graded base and a 125-nm InP collector and feature a peak current gain β = 35, with a base sheet resistance R_SH = 1160 Ω/sq. The present transistors are the first InP/GaAsSb DHBTs to feature f_MAX = 500 GHz, according to three extraction schemes. The present transistor performance is limited by an undepleted collector layer associated with a doping tail extending from the subcollector.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; DHBT; InP-GaAsSb; base sheet resistance; extraction schemes; frequency 500 GHz; maximum oscillation frequency; undepleted collector layer; Cutoff frequency; Doping; Double heterojunction bipolar transistors; Indium phosphide; Oscillators; Double heterojunction bipolar transistors (DHBTs); InP/GaAsSb; maximum oscillation frequency $(f_{rm MAX})$; millimeter-wave transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2118738

Filename

5750015