DocumentCode
1494215
Title
A New Model for Two-Dimensional Electrical-Field-Dependent 
Instability of pMOSFETs With Ultrathin DPN Gate Dielectrics
Author
Yang, Jiaqi ; Yang, Jingfeng ; Liu, X.Y. ; Han, R.Q. ; Kang, J.F. ; Gan, Z.H. ; Liao, C.C. ; Wu, H.M.
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
Volume
32
Issue
5
fYear
2011
fDate
5/1/2011 12:00:00 AM
Firstpage
605
Lastpage
607
Abstract
The 2-D electrical-field-dependent hot-hole-related negative-bias temperature instability (HH-NBTI) behaviors of pMOSFETs with 1.7-nm decoupled-plasma-nitridation oxynitride dielectrics are investigated. The lateral-channel electric-field-induced turnaround HH-NBTI degradation that is associated with the enhanced breaking effect of the interfacial Si-H bonds at the Si interface is demonstrated. For the first time, the lateral-electric-field-dependent activation energy of ≡ Si- H bond dissociation is presented. A new model taking into account the 2-D electric field effects is proposed to depict the HH-NBTI behaviors related to the lateral- and vertical-channel electric fields. The proposed model is verified by the experimental data.
Keywords
MOS integrated circuits; MOSFET; dielectric materials; dissociation; silicon; 2D electrical-field-dependent instability; Si-H; bond dissociation; decoupled-plasma-nitridation oxynitride dielectrics; hot-hole-related negative-bias temperature instability; lateral-channel electric-field-induced turnaround HH-NBTI degradation; lateral-electric-field-dependent activation energy; pMOSFET; ultrathin DPN gate dielectrics; vertical-channel electric fields; Degradation; Dielectrics; Human computer interaction; Logic gates; MOSFETs; Stress; Temperature measurement; 2-D electrical field; Activation energy; Si–H bond dissociation; hot-hole-related negative-bias temperature instability (HH-NBTI);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2119392
Filename
5750021
Link To Document