Title :
Characteristics of vertically-stacked planar tunnel junction structures
Author :
Blamire, M.G. ; Somekh, R.E. ; Morris, G.W. ; Evetts, J.E.
Author_Institution :
Dept. of Mater. Sci. & Metall., Cambridge Univ., UK
fDate :
3/1/1989 12:00:00 AM
Abstract :
Whole-wafer multilayer tunnel structures consisting of vertically stacked Al2O3 tunnel barriers separated by thin Nb layers have been deposited under UHV (ultrahigh vacuum) conditions, with repeat distances ranging from 10-50 nm. Using a modification of the conventional SNEP process, these structures have been fabricated into vertical series arrays. Using this technique it is possible to select different numbers of junctions on the same substrate and so determine the properties of each barrier. Information gained from such structures provides a considerable insight into the factors determining junction characteristics such as critical current density and quality as well as serving as the basis for the study of novel types of structures and devices
Keywords :
critical current density (superconductivity); integrated circuit technology; superconducting junction devices; superconductive tunnelling; Al2O3 tunnel barriers; Nb-Al2O3; SNEP process; critical current density; junction characteristics; planar tunnel junction structures; quality; superconducting junctions; ultrahigh vacuum; vertical series arrays; vertically-stacked; whole wafer process; Critical current density; Electronic circuits; Etching; Fabrication; Materials science and technology; Mechanical factors; Niobium; Nonhomogeneous media; Plasma temperature; Superconducting epitaxial layers;
Journal_Title :
Magnetics, IEEE Transactions on
