On Gate Capacitance of Nanotube Networks

Author

Liu, Zhiying ; Li, Jiantong ; Qiu, Zhi-Jun ; Zhang, Zhi-Bin ; Zheng, Li-Rong ; Zhang, Shi-Li

Volume

32

Issue

5

fYear

2011

fDate

5/1/2011 12:00:00 AM

Firstpage

641

Lastpage

643

Abstract

This letter presents a systematic investigation of the gate capacitance CG of thin-film transistors (TFTs) based on randomly distributed single-walled carbon nanotubes (SWCNTs) in the channel. In order to reduce false counting of SWCNTs that do not contribute to current conduction, CG is directly measured on the TFTs using a well-established method for MOSFETs. Frequency dispersion of CG is observed, and it is found to depend on the percolation behavior in SWCNT networks. This dependence can be accounted for using an RC transmission line model. These results are of important implications for the determination of carrier mobility in nanoparticle-based TFTs.

Keywords

MOSFET; capacitance; carbon nanotubes; carrier mobility; nanoparticles; MOSFET; RC transmission line model; SWCNT network; carrier mobility; current conduction; false counting; frequency dispersion; gate capacitance; nanoparticle-based TFT; nanotube network; percolation behavior; randomly distributed single-walled carbon nanotube; thin-film transistor; Capacitance; Carbon nanotubes; Electrodes; Frequency modulation; Laboratories; Logic gates; Thin film transistors; Frequency dependence; gate capacitance; nanotube networks; percolation; transmission line model;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2118733

Filename

5750025