Author :
Yuan, Xibo ; Shimizu, Tsuyoshi ; Mahalingam, U. ; Brown, J.S. ; Habib, Kareem ; Tekleab, D.G. ; Su, T.-C. ; Satadru, S. ; Olsen, C.M. ; Lee, Hongseok ; Pan, Li-Hong ; Hook, T.B. ; Han, J.-P. ; Park, Jun-Eun ; Na, M.-H. ; Rim, Ken
Author_Institution :
Microelectron. Div., IBM, Hopewell Junction, NY, USA
Abstract :
Transistor mismatch data and analysis from state-of-the-art high-k/metal-gate (HKMG) technology are presented. By normalising mismatch data against oxide thickness (TINV), threshold voltage (VTH), and effective work function, direct comparison of VTH mismatch from various device types is made. It is quantitatively demonstrated that effective work function variation (EWFV) does not generate significant VTH variability in the present HKMG technology.
