DocumentCode
1494435
Title
Amplitude-modulation sideband injection locking characteristics of semiconductor lasers and their application
Author
Kikuchi, K. ; Zah, C.-E. ; Lee, T.-P.
Author_Institution
Bell Commun. Res., Red Bank, NJ, USA
Volume
6
Issue
12
fYear
1988
fDate
12/1/1988 12:00:00 AM
Firstpage
1821
Lastpage
1830
Abstract
Amplitude-modulation (AM) sideband injection-locking characteristics of 1.3-μm distributed-feedback lasers are studied experimentally. When the master laser light, which is amplitude-modulated, is injected into slave lasers, the slave lasers can be phase-locked to each sideband of the master laser. This means that the frequency separation between slave lasers can be controlled by the modulation frequency of the master laser. By controlling the injection power, it is possible to achieve a very stable AM sideband injection-locked state of slave lasers. Results on phase-noise and phase-modulation measurements, the frequency stabilization between two channels, and the injection locking to a short pulse are presented. On the basis of the experimental results, an example for designing the multifrequency laser transmitter by means of the AM sideband injection-locking and the mode-locking techniques is described
Keywords
amplitude modulation; laser beam applications; laser mode locking; laser modes; laser transitions; optical modulation; semiconductor junction lasers; 1.3 micron; AM sideband injection-locked state; amplitude-modulation sideband locking; distributed-feedback lasers; frequency stabilization; laser mode-locking; laser phase-locking; master laser; multifrequency laser transmitter; phase-modulation; phase-noise; semiconductor lasers; slave lasers; Frequency measurement; Frequency modulation; Injection-locked oscillators; Laser mode locking; Laser stability; Master-slave; Optical control; Phase measurement; Power lasers; Pulse measurements;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/50.9251
Filename
9251
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