A vertical resonant tunneling transistor for application in digital logic circuits

Author

Stock, Jürgen ; Malindretos, Jörg ; Indlekofer, Klaus Michael ; Pöttgens, Michael ; Förster, Arno ; Lüth, Hans

Author_Institution

Inst. of Thin Film & Interfaces, Res. Center Julich GmbH, Julich, Germany

Volume

48

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

1028

Lastpage

1032

Abstract

A vertical resonant tunneling transistor (VRTT) has been developed, its properties and its application in digital logic circuits based on the monostable-bistable transition logic element (MOBILE) principle are described. The device consists of a small mesa resonant tunneling diode (RTD) in the GaAs/AlAs material system surrounded by a Schottky gate. We obtain low peak voltages using InGaAs in the quantum well and the devices show an excellent peak current control by means of an applied gate voltage. A self latching inverter circuit has been fabricated using two VRTTs and the switching functionality was demonstrated at low frequencies

Keywords

III-V semiconductors; aluminium compounds; field effect logic circuits; gallium arsenide; logic gates; resonant tunnelling transistors; GaAs-AlAs; Schottky gate; VRTTs; applied gate voltage; digital logic circuits; low peak voltages; monostable-bistable transition logic element; peak current control; quantum well; resonant tunneling diode; self latching inverter circuit; switching functionality; vertical resonant tunneling transistor; Current control; Gallium arsenide; Indium gallium arsenide; Inverters; Logic circuits; Logic devices; Low voltage; Resonant tunneling devices; Schottky diodes; Switching circuits;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.925221

Filename

925221