Title :
Radiation Sensor Compatible With Standard CMOS Technology
Author :
Moreno, E. Garcia ; Picos, R. ; Isern, E. ; Roca, M. ; Bota, S. ; Suenaga, K.
Author_Institution :
Univ. of Balearic Islands, Palma, Spain
Abstract :
This paper presents a gamma radiation dosimeter built in a standard 0.35 mum CMOS technology. The dosimeter, which occupies 300 times 150 mum times mum of silicon area, gives a digital output signal of frequency proportional to the total dose. Experimental results up to 1.5 Mrads are presented. Measured low dose radiation responsivity is 84.7 Hz/Krad and sensitivity to temperature and supply voltage are 1.43 kHz/degC and 20.9 kHz/V, respectively.
Keywords :
CMOS integrated circuits; MOSFET; dosimeters; elemental semiconductors; gamma-ray effects; silicon; MOSFET sensors; Si; digital output signal; gamma radiation dosimeter; low dose radiation; radiation sensor; silicon; standard CMOS technology; CMOS technology; Charge carrier processes; Electron traps; Integrated circuit technology; MOSFET circuits; Nuclear electronics; Paper technology; Radiation effects; Silicon; Voltage; Gamma dosimeter; MOSFET sensors; radiation effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2011804
