Title :
A charge pumping device with a potential barrier using inversion charge transfer
Author :
Chung, In-Young ; Park, Young June ; Min, Hong Shick
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
fDate :
6/1/2001 12:00:00 AM
Abstract :
A new charge pumping device using the MOS capacitor is proposed and its operational characteristics are studied by device simulations. The device has a structure similar to a MOSFET device consisting of the charge source region, floating node (the output), MOS capacitor, and potential barrier. The charges are transferred from the charge source region to the inversion layer of MOS capacitor when the gate is turned on and a certain portion of them are transferred to the floating node through the barrier while the gate turns off. Through two-dimensional device simulations, it is shown that the new device efficiently obtains a boosted voltage with the magnitude of about 1 V
Keywords :
MOS capacitors; electric charge; inversion layers; semiconductor device models; 2D device simulations; MOS capacitor; MOSFET-like structure; boosted voltage; charge pumping device; charge source region; floating node; inversion charge transfer; inversion layer; operational characteristics; potential barrier; Charge pumps; Charge transfer; Contacts; Doping; EPROM; MOS capacitors; MOSFET circuits; Power supplies; Threshold voltage; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
