Title :
Simulation of power heterojunction bipolar transistors on gallium arsenide
Author :
Palankovski, Vassil ; Schultheis, Ruediger ; Selberherr, Siegfried
Author_Institution :
Inst. fur Mikroelectron., Tech. Univ. Wien, Austria
fDate :
6/1/2001 12:00:00 AM
Abstract :
We demonstrate the results of two-dimensional (2-D) hydrodynamic simulations of one-finger power heterojunction bipolar transistors (HBTs) on GaAs. An overview of the physical models used and comparisons with experimental data are given. We present models for the thermal conductivity and the specific heat applicable to all relevant diamond and zinc-blende structure semiconductors. They are expressed as functions of the lattice temperature and in the case of semiconductor alloys, of the material composition
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; power bipolar transistors; semiconductor device models; specific heat; thermal conductivity; 2D hydrodynamic simulations; GaAs; lattice temperature; material composition; one-finger power heterojunction bipolar transistors; physical models; specific heat; thermal conductivity; Composite materials; Gallium arsenide; Heterojunction bipolar transistors; Hydrodynamics; III-V semiconductor materials; Lattices; Semiconductor materials; Temperature; Thermal conductivity; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
