• DocumentCode
    1494828
  • Title

    Impact of N2O activation treatment on junction characteristics of p+/n junctions formed by a solid diffusion source

  • Author

    Yang, Wen Luh ; Liu, Don-Gey ; Chu, Kuo Wei

  • Author_Institution
    Dept. of Electr. Eng., Feng Chia Univ., Taichung, Taiwan
  • Volume
    48
  • Issue
    6
  • fYear
    2001
  • fDate
    6/1/2001 12:00:00 AM
  • Firstpage
    1277
  • Lastpage
    1279
  • Abstract
    The authors have investigated p+/n junctions formed by a solid-boron-source under different activation ambient gases. It was found that the junction depth strongly depends on the activation ambient gas and the corresponding flow rate. Especially in the N2O ambient, the diffusion of boron is enormously enhanced. Furthermore, the thermal stability of CoSi2 is profoundly improved by the N 2O treatment during activation
  • Keywords
    boron; diffusion; doping profiles; nitrogen compounds; p-n junctions; secondary ion mass spectra; silicon; B profiles; CoSi2; N2O; N2O activation treatment; N2O ambient; Si:B; activation ambient gases; gas flow rate; junction characteristics; junction depth; p+/n junctions; solid B source; solid diffusion source; thermal stability; Annealing; Bonding; Boron; Doping; Gases; Germanium silicon alloys; Silicides; Silicon germanium; Temperature; Thermal stability;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.925261
  • Filename
    925261
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1494828