Title :
Optimization of sub-5-nm multiple-thickness gate oxide formed by oxygen implantation
Author :
King, Ya-Chin ; Kuo, Charles ; King, Tsu-Jae ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
6/1/2001 12:00:00 AM
Abstract :
A new method of growing multiple gate oxide thicknesses below 5 nm using masked oxygen implantation is presented. Multiple thicknesses can be achieved on the same wafer without degradation in the oxide properties. The oxygen implanted oxide quality is comparable to that of thermally grown oxides. Moreover, the effects of oxygen implant damage is minimized with higher implant energies, thicker sacrificial oxides, and low-temperature annealing
Keywords :
CMOS integrated circuits; MOSFET; annealing; dielectric thin films; integrated circuit technology; ion implantation; oxidation; 5 nm; O; high implant energies; implant damage minimization; implanted oxide quality; low-temperature annealing; masked O implantation; multiple-thickness gate oxide; oxide properties; sacrificial oxides; sub-5 nm gate oxide CMOS technologies; Annealing; Boron; Fabrication; Implants; Oxidation; Oxygen; Semiconductor films; Silicon; Substrates; Thermal degradation;
Journal_Title :
Electron Devices, IEEE Transactions on
