Title :
Fabrication of monolithically-integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb resonant interband tunneling diodes
Author :
Fay, P. ; Jiang, Lu ; Xu, Y. ; Bernstein, G.H. ; Chow, D.H. ; Schulman, J.N. ; Dunlap, H.L. ; De Los, H. J Santos
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
fDate :
6/1/2001 12:00:00 AM
Abstract :
The integration of InAs/AlSb/GaSb resonant interband tunneling diodes (RITDs) with InAlAs/InGaAs/InP high electron mobility transistors (HEMTs) is reported. The integrated devices exhibit nearly identical performance to discrete control devices from DC through microwave frequencies. RITDs with peak current densities of 24.5 kA/cm2 and peak voltages of 0.12 V have been demonstrated for devices with 1.2-nm thick AlSb barriers. HEMTs with 0.2-μm gates have been fabricated, and fts of 127 GHz and fmax of 183 GHz have been obtained. To the authors´ knowledge, this is the first report of the monolithic integration of RITDs with HEMTs on InP
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; high-speed integrated circuits; indium compounds; integrated logic circuits; resonant tunnelling diodes; 0.12 V; 0.2 micron; 1.2 nm; 127 GHz; 183 GHz; HEMTs; InAlAs-InGaAs-InP; InAs-AlSb-GaSb; InP; InP substrate; RITDs; RTD; high electron mobility transistors; high speed logic circuits; logic gates; monolithic integration; resonant interband tunneling diodes; Diodes; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Microwave frequencies; Resonance; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
