Title :
Low noise AlGaN metal-semiconductor-metal photodiodes
Author :
Monroy, Edwin ; Calle, F. ; Munoz, Eugenio ; Omnes, F. ; Gibart, P.
Author_Institution :
ETSI Telecomunicacion, Univ. Politecnica de Madrid
fDate :
2/4/1999 12:00:00 AM
Abstract :
AlGaN metal-semiconductor-metal photodiodes with a sharp cutoff wavelength as short as 310 nm are reported for the first time. The devices show a low dark current, <0.3 μA at 40 V. The responsivity is flat over the bandgap, with a high visible rejection. At 28 V bias, the noise equivalent power is lower than 17 pW/Hz1/2 and ~24 pW/Hz1/2 in GaN and Al0.25Ga0.75N photodiodes, respectively
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; metal-semiconductor-metal structures; photodiodes; semiconductor device noise; 310 nm; 40 V; AlGaN; III-V semiconductors; cutoff wavelength; dark current; metal-semiconductor-metal photodiodes; noise equivalent power; responsivity; semiconductor device noise; visible rejection;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990153
