• DocumentCode
    1494984
  • Title

    Eleven-bit parity generator with a single, vertically integrated resonant tunnelling device

  • Author

    Lakhani, A.A. ; Potter, Robert C.

  • Author_Institution
    Applied Signal Aerosp. Co., Columbia, MD
  • Volume
    24
  • Issue
    11
  • fYear
    1988
  • fDate
    5/26/1988 12:00:00 AM
  • Firstpage
    681
  • Lastpage
    683
  • Abstract
    A vertically integrated diode (VID) with five negative differential resistance regions has been developed by stacking five resonant tunnelling structures. This device can be used for processing both analogue and digital signals. An 11-bit parity checker was demonstrated using the VID. In this approach, a single device replaced a large number of exclusive-OR gates in a conventional parity checker
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated logic circuits; monolithic integrated circuits; tunnel diodes; AlInAs-GaInAs; eleven-bit parity generator; exclusive-OR gates; negative differential resistance regions; parity checker; single device; vertically integrated diode; vertically integrated resonant tunnelling device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    5751