DocumentCode
1495125
Title
GaN Schottky Barrier Photodetectors With a Lattice-Matched 
Intermediate Layer
Author
Huang, Z.D. ; Weng, W.Y. ; Chang, S.J. ; Hung, S.C. ; Chiu, C.J. ; Hsueh, T.J. ; Lai, W.C. ; Wu, S.L.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
11
Issue
11
fYear
2011
Firstpage
2895
Lastpage
2901
Abstract
GaN Schottky barrier ultraviolet (UV) photodetectors (PDs) with a low-temperature Al0.82In0.18N intermediate layer were fabricated and characterized. With the intermediate layer, it was found that we could reduce the reverse leakage current by more than three orders of magnitude and achieve a 45 times larger UV-to-visible rejection ratio. Compared with the conventional GaN PDs, it was found that we could also reduce noise level and achieve a larger detectivity by inserting the lattice-matched AlInN intermediate layer.
Keywords
III-V semiconductors; Schottky barriers; aluminium compounds; gallium compounds; indium compounds; leakage currents; photodetectors; ultraviolet detectors; wide band gap semiconductors; GaN-Al0.82In0.18N; Schottky barrier UV photodetector; Schottky barrier ultraviolet photodetector; UV-to-visible rejection ratio; lattice-matched intermediate layer; low-temperature intermediate layer; noise level reduction; reverse leakage current reduction; Current measurement; Gallium nitride; Noise; Noise measurement; Photodetectors; Schottky barriers; Wavelength measurement; AlInN; GaN; photodetectors;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2011.2143402
Filename
5751200
Link To Document