DocumentCode :
1495142
Title :
An n- 
/i-Diamond/p-Diamond Diode With Nanotip Structure for High-Temperature CO Sensing Applications
Author :
Juang, Feng-Renn ; Chiu, Hung-Yu ; Fang, Yean-Kuen ; Cho, Kao-Hsien ; Chen, You-Chi
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
59
Issue :
6
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
1786
Lastpage :
1791
Abstract :
The Pd/n-SnOx/i-diamond/p-diamond diodes prepared by field-enhanced hot-wire CVD (HWCVD) (FEHWCVD) system on a silicon substrate with nanotip structures are studied systematically. Both the nanotip structure and the better film quality deposited by the FEHWCVD lead the developed p-i-n diamond diode to have a high relative sensitivity ratio of ~ 91% to 100-ppm-carbon monoxide (CO)-gas ambient. The sensitivity ratio is better than 79% compared to the one without the nanotip and prepared by the conventional HWCVD. Thus, the developed p-i-n diamond diode has better potential for high-temperature CO sensing applications.
Keywords :
carbon compounds; chemical vapour deposition; diamond; gas sensors; p-i-n diodes; palladium; tin compounds; CO2; FEHWCVD system; Pd-SnOx-C; Si; field-enhanced hot-wire CVD system; film quality deposition; high-temperature sensing application; nanotip structure; p-i-n diode; relative sensitivity ratio; Diamond-like carbon; Nanostructures; P-i-n diodes; Sensitivity; Sensors; Silicon; Substrates; $hbox{SnO}_{x}$
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2191408
Filename :
6183505
Link To Document :
