• DocumentCode
    1495142
  • Title

    An n- \\hbox {SnO}_{x} /i-Diamond/p-Diamond Diode With Nanotip Structure for High-Temperature CO Sensing Applications

  • Author

    Juang, Feng-Renn ; Chiu, Hung-Yu ; Fang, Yean-Kuen ; Cho, Kao-Hsien ; Chen, You-Chi

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    59
  • Issue
    6
  • fYear
    2012
  • fDate
    6/1/2012 12:00:00 AM
  • Firstpage
    1786
  • Lastpage
    1791
  • Abstract
    The Pd/n-SnOx/i-diamond/p-diamond diodes prepared by field-enhanced hot-wire CVD (HWCVD) (FEHWCVD) system on a silicon substrate with nanotip structures are studied systematically. Both the nanotip structure and the better film quality deposited by the FEHWCVD lead the developed p-i-n diamond diode to have a high relative sensitivity ratio of ~ 91% to 100-ppm-carbon monoxide (CO)-gas ambient. The sensitivity ratio is better than 79% compared to the one without the nanotip and prepared by the conventional HWCVD. Thus, the developed p-i-n diamond diode has better potential for high-temperature CO sensing applications.
  • Keywords
    carbon compounds; chemical vapour deposition; diamond; gas sensors; p-i-n diodes; palladium; tin compounds; CO2; FEHWCVD system; Pd-SnOx-C; Si; field-enhanced hot-wire CVD system; film quality deposition; high-temperature sensing application; nanotip structure; p-i-n diode; relative sensitivity ratio; Diamond-like carbon; Nanostructures; P-i-n diodes; Sensitivity; Sensors; Silicon; Substrates; $hbox{SnO}_{x}$; CO sensor; diamond; p-i-n diode;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2012.2191408
  • Filename
    6183505
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1495142