DocumentCode :
1495316
Title :
DARSI: RC data reduction [VLSI simulation]
Author :
Vanoostende, Paul ; Six, Paul ; De Man, Hugo J.
Author_Institution :
IMEC, Leuven, Belgium
Volume :
10
Issue :
4
fYear :
1991
fDate :
4/1/1991 12:00:00 AM
Firstpage :
493
Lastpage :
500
Abstract :
Taking into account RC effects in VLSI simulation and verification systems, without seriously degrading their efficiency, requires preliminary data reduction. A tool, DARSI (data reduction system for interconnects), that can handle both polysilicon and diffusion resistive effects is presented. It contains the reduction scheme described by S.-L. Su et al. (Proc. IEEE Conf. Computer-Aided Design, p.270-3, 1986), a novel line-based reduction method, a novel loop reduction scheme, and a technique for identifying important diffusion resistors. The number of parasitic elements is considerably reduced, while guaranteeing delay errors to be less than a few percent. DARSI is implemented in a general-purpose rule-based verification environment for VLSI and has a nearly linear complexity. Application to several practical designs is also discussed
Keywords :
VLSI; circuit analysis computing; integrated circuit technology; DARSI; RC data reduction; RC effects; VLSI simulation; diffusion resistive effects; diffusion resistors; interconnects; line-based reduction method; loop reduction scheme; nearly linear complexity; polysilicon resistive effects; rule-based verification environment; Circuit simulation; Data mining; Degradation; Delay; Diodes; Feeds; Integrated circuit interconnections; Resistors; Very large scale integration; Wire;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.75632
Filename :
75632
Link To Document :
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